Organic electro-luminescence display device and method for fabricating the same

ABSTRACT

An organic electro-luminance display device includes a first substrate and a second substrate; an array element on the first substrate, the array element including at least one thin film transistor (TFT) in each sub-pixel; a first electrode on the second substrate; a buffer on the first electrode including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; a second electrode formed on the organic electro-luminescent layer; and a conductive spacer for electrically connecting the TFT to the second electrode.

This application is a divisional of U.S. patent application Ser. No.11/288,302, filed on Nov. 29, 2005, now U.S. Pat. No. 7,772,763 whichclaims the benefit of Korean Patent Application Nos. 2004-100627, filedon Dec. 2, 2004, 2004-115485, filed on Dec. 29, 2004 and 2005-0087895,filed on Sep. 21, 2005, all of which are hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic electro-luminescence displaydevice and a method for fabricating the same.

2. Discussion of the Related Art

Various kinds of flat panel display devices that can replace heavy andbulky cathode ray tubes (CRTs) have been recently developed. Examples ofthe flat panel display devices are liquid crystal display (LCD) devices,field emission display (FED) devices, plasma display panel (PDP)devices, and electro-luminescence display devices.

Many attempts have been actively made to improve the display quality ofthe flat panel displays and provide large-sized displays. Among them,the electro-luminescence display devices are self-luminous and displayvideo images by exciting a phosphor material using carriers, such aselectrons and holes. The electro-luminescence display devices areclassified into inorganic electro-luminescence display devices andorganic electro-luminescence display devices. While the inorganicelectro-luminescence display devices require a high voltage of 100-200V,the organic electro-luminescence display devices can be driven at a lowDC voltage of 2-20V. In addition, the organic electro-luminescencedisplay devices have such advantages as wide viewing angle, rapidresponse time and high contrast ratio. Therefore, the organicelectro-luminescence display devices can be used as a graphic display, atelevision monitor, or a surface light source. Further, because theorganic electro-luminescence display devices are slim, lightweight andelegant in color vision, they are suitable for a next-generation flatpanel display device.

A passive matrix type driving method is widely used for driving theorganic electro-luminescence display devices, which does not requirethin film transistors (TFTs). The passive matrix type driving method,however, has many limitations in resolution, power consumption,lifetime, and so on. Therefore, an active matrix type driving method hasbeen researched and developed for a next-generation display device thatrequires a high resolution and large-size screen.

Hereinafter, an organic electro-luminescence display device according tothe related art will be described with reference to the accompanyingdrawings.

FIG. 1 is a schematic sectional view of an active matrix type organicelectro-luminescence display device according to the related art. Forconvenience's sake, one pixel region including a red (R) sub-pixel, agreen (G) sub-pixel, and a blue (B) sub-pixel is illustrated in FIG. 1.

Referring to FIG. 1, first and second substrates 10 and 30 are arrangedto face each other. A TFT T is formed on a transparent substrate 1 ofthe first substrate 10 in each sub-pixel. An organic electro-luminescentlayer 14 is formed on the TFT T and the first electrode 12. The organicelectro-luminescent layer 14 contains light emission materials todisplay red, green and blue colors. A second electrode 16 is formed onthe organic electro-luminescent layer 14. The first and secondelectrodes 12 and 16 apply an electric field to the organicelectro-luminescent layer 14. The first substrate 10 on which theorganic electro-luminescent layer 14 is formed is attached to the secondsubstrate 30.

The active matrix type organic electro-luminescence display deviceillustrated in FIG. 1 has a bottom emission type structure. When thefirst electrode 12 and the second electrode 16 are respectively used asan anode and a cathode, the first electrode 12 is formed of atransparent conductive material and the second electrode 16 is formed ofa metal having a low work function. Under this condition, the organicelectro-luminescent layer 14 includes a hole injection layer 14 a, ahole transporting layer 14 b, an emission layer 14 c and an electrontransporting layer 14 d, which are sequentially formed on the firstelectrode 12. The light-emitting materials for red, green and bluecolors are arranged in the emission layers 14 c of the sub-pixels.

In the organic electro-luminescence display device, the array element,including the TFT and the electrodes, and the organicelectro-luminescent diode are stacked on the same substrate. The organicelectro-luminescence display device is fabricated by attaching thesubstrate, on which the array element and the organicelectro-luminescent diode are formed, to a separate substrate providedfor encapsulation. In this case, the yield of the organicelectro-luminescence display device is determined by the product of theyields of the array element and the organic electro-luminescent diode.Therefore, the entire process yield is greatly restricted by the processof forming the organic electro-luminescent diode. For example, even ifthe array element is successfully formed, the organicelectro-luminescence display device becomes defective, when the organicelectro-luminescent layer, which is generally a thin film having athickness of about 1000 Å, has a defect cased by a foreign particle orother factors.

In addition, the bottom emission type organic electro-luminescencedisplay device according to the related art has limitation in apertureratio, although it has a high stability and high degree of freedom dueto the encapsulation. Thus, it is difficult for the bottom emission typeorganic electro-luminescence device to be used for a high-definitionproduct.

As for the top emission type organic electro-luminescence devicesaccording to the related art, the design of TFTs is easy and theaperture ratio is high. Thus, it is advantageous in view of the lifetimeof the products. However, because the cathode is disposed on the organicelectro-luminescent layer, material selection is restricted. As aresult, the transmittance is limited and the luminous efficiency isdegraded.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an organicelectro-luminescence display device and a method for fabricating thesame that substantially obviate one or more problems due to limitationsand disadvantages of the related art.

An advantage of the present invention is to provide an organicelectro-luminescence display device and a method for fabricating thesame, in which electrodes can be separated from one another insub-pixels without using a conventional reverse-taper-shape separator.

Additional advantages and features of the invention will be set forth inpart in the description which follows and in part will become apparentto those having ordinary skill in the art upon examination of thefollowing or may be learned from practice of the invention. These andother advantages of the invention may be realized and attained by thestructure particularly pointed out in the written description and claimshereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the invention, as embodied and broadly described herein, an organicelectro-luminance display device includes a first substrate and a secondsubstrate; an array element on the first substrate, the array elementincluding at least one thin film transistor (TFT) in each sub-pixel; afirst electrode on the second substrate; a buffer on the first electrodeincluding a first buffer at a boundary area of each sub-pixel and asecond buffer at a stepped portion of the first buffer, wherein thebuffer that includes the first and second buffers has a undercutstructure; an emitting layer in each sub-pixel; a second electrode onthe emitting layer; and a conductive spacer for electrically connectingthe TFT to the second electrode.

In another aspect of the present invention, a method for fabricating anorganic electro-luminance display device includes forming an arrayelement on a first substrate, the array element including at least oneTFT in each sub-pixel; forming a first electrode on a second substrate;forming a buffer on the first electrode, the buffer including a firstbuffer at an outer region partitioning each sub-pixel and a secondbuffer at a region including a stepped portion of the first buffer,wherein a undercut structure is formed by the first and second buffers;forming an organic electro-luminescent layer in each sub-pixelpartitioned by the second buffer; forming a second electrode on theorganic electro-luminescent layer; and attaching the first and secondsubstrates together.

In a further aspect of the present invention, an organicelectro-luminance display device includes a substrate having a pluralityof pixel regions; a first electrode on the substrate; an organicelectro-luminescent layer on the first electrode in each pixel region; asecond electrode formed on the organic electro-luminescent layer in eachpixel region; a first buffer on the first electrode, the first buffersurrounding a region in which the organic electro-luminescent layer andthe second electrode are formed; and a second buffer formed at a steppedportion of the first buffer in a round taper shape.

In a further aspect of the present invention, a method for fabricatingan organic electro-luminance display device includes providing asubstrate having a pixel region; forming a first electrode on thesubstrate; forming a first buffer on the first electrode except for thepixel region; forming a second buffer at a stepped portion of the firstbuffer to surround the pixel region; forming a undercut structure byetching a portion of the first buffer that is not overlapped with thesecond buffer; forming an organic electro-luminescent layer in the pixelregion; and forming a second electrode on the organicelectro-luminescent layer.

It is to be understood that both the foregoing general description andthe following detailed description of the present invention areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention.

In the drawings:

FIG. 1 is a schematic sectional view of an organic electro-luminescencedisplay device according to the related art;

FIG. 2 is a plan view of an organic electro-luminescence display deviceaccording to a first embodiment of the present invention;

FIG. 3 is a sectional view taken along the line I-I′ of FIG. 2;

FIG. 4 is an enlarged view of a region A illustrated in FIG. 3;

FIG. 5 is photographs illustrating depths of the undercut of a bufferaccording to composition ratios of silane and ammonia;

FIGS. 6A to 6F are sectional views illustrating a method for fabricatingthe organic electro-luminescence display device according to the firstembodiment of the present invention;

FIG. 7 is a flowchart illustrating a method for fabricating the organicelectro-luminescence display device according to the first embodiment ofthe present invention;

FIG. 8 is a plan view of an organic electro-luminescence display deviceaccording to a second embodiment of the present invention;

FIGS. 9A to 9G are sectional views illustrating a method for fabricatingthe organic electro-luminescence display device according to the secondembodiment of the present invention; and

FIG. 10 is a plan view of an organic electro-luminescence display deviceaccording to a third embodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to embodiments of the presentinvention, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers will be usedthroughout the drawings to refer to the same or like parts.

FIG. 2 is a plan view of an organic electro-luminescence display deviceaccording to a first embodiment of the present invention, and FIG. 3 isa sectional view taken along the line I-I′ of FIG. 2.

Referring to FIGS. 2 and 3, the organic electro-luminescence displaydevice 200 includes an R sub-pixel, a G sub-pixel, and a B sub-pixel,which are arranged in a matrix configuration and constitute one pixel.The sub-pixels are separated from one another by a buffer layer thatincludes a first buffer 533 and a second buffer 535. Auxiliaryelectrodes 139 are arranged around the sub-pixels in a grid shape. Theauxiliary electrodes 139 contact a first electrode 132 to commonly applya voltage to the sub-pixels.

In FIG. 2, a reference numeral 810 refers to a spacer contact and itsstructure and function will be described later with reference to FIG. 8.

The buffer layer having the first and second buffers 533 and 535 isformed to have a undercut structure. The auxiliary electrodes 139, whichare formed of the same material as a second electrode 138, is formed onthe first electrode 132.

In the organic electro-luminescence display device 200, first and secondsubstrates 110 and 130 are arranged spaced apart from each other by apredetermined distance. An array element 120 is formed on a transparentsubstrate 100 of the first substrate 110. Also, an organicelectro-luminescent diode E is formed on an inner surface of atransparent substrate 101 of the second substrate 130.

The organic electro-luminescent diode E formed on the transparentsubstrate 101 of the second substrate 130 includes the first electrode132, the first buffer 533 and the second buffer 535. The first electrode132 serving as a common electrode is formed on the transparent substrate101. The first buffer 533 is formed at an outer region partitioning eachsub-pixel on the first electrode 132. The second buffer 535 is formed ina round taper shape at a region including a stepped portion of the firstbuffer 533.

A portion of the first buffer 533 that is not overlapped with the secondbuffer 535 is removed in a undercut structure to form a space 534. Thespace 534 separates the second electrode 138 of each sub-pixel, asillustrated in FIGS. 3 and 4. Thus, a reverse-taper-shaped separator,which is used in a conventional organic electro-luminescent displaydevice to separate the second electrode of each sub-pixel, is notrequired.

The organic electro-luminescent diode E further includes an organicelectro-luminescent layer 136. In each sub-pixel, the organicelectro-luminescent layer 136 and the second electrode 138 are formed insequence. That is, the organic electro-luminescent layer 136 and thesecond electrode 138 are formed in each sub-pixel and separated fromthose in neighboring sub-pixels by the first and second buffers 533 and535.

The organic electro-luminescent layer 136 includes a first carriertransporting layer 136 a, an emission layer 136 b and a second carriertransporting layer 136 c, which are stacked in sequence. The first andsecond carrier transporting layers 136 a and 136 c function to inject ortransport electrons or holes into the emission layer 136 b. The firstand second carrier transporting layers 136 a and 136 c are determined byarrangement of anode and cathode electrodes. For example, when theemission layer 136 b is formed of a high molecular compound and thefirst and second electrodes 132 and 138 are respectively configured asanode and cathode electrodes, the first carrier transporting layer 136 acontacting the first electrode 132 has a stacked structure of a holeinjection layer and a hole transporting layer, and the second carriertransporting layer 136 c contacting the second electrode 138 has astacked structure of an electron injection layer and an electrontransporting layer.

The organic electro-luminescent layer 136 can be formed of a highmolecular compound or low molecular compound by a vacuum depositionmethod or a solution casting method, such as an inkjet process, aprinting process, a nozzle spraying process, a roll coating process, andthe like. A vapor deposition method is generally used, when the organicelectro-luminescent layer 136 is formed of a low molecular compound.Meanwhile, when the organic electro-luminescent layer 136 is formed of ahigh molecular compound, an inkjet process is generally used. Althoughan inkjet process is used to form the organic electro-luminescent layer136 in the present invention, it should be appreciated that variousmethods including the above-described methods can be employed to formthe organic electro-luminescent layer 136.

The array element 120 of the first substrate 110 includes TFTs T. Inorder to supply a current to the organic electro-luminescent diode E, acylindrical conductive spacer 114 is disposed at a position where thesecond electrode 138 and the TFTs T are connected to each other in eachsub-pixel. The conductive spacers 114, which have a constant height,electrically connect the two substrates and maintain a cell gap betweenthe two substrates. That is, the conductive spacer 114 electricallyconnects a drain electrode 112 of the TFT T provided on the firstsubstrate 110 in each sub-pixel with the second electrode 138 providedon the second substrate 130. The conductive spacer 114 is formed bycoating a cylindrical spacer formed of an organic insulating layer witha metal. Because of the conductive spacer 114, pixels of the first andsecond substrates 110 and 130 are attached in a one-to-onecorrespondence, such that a current can flow therethrough.

The connection portion between the conductive spacer 114 and the TFT Twill now be described in more detail.

A passivation layer 124 is formed at a region covering the TFT T. Thepassivation layer 124 includes a drain contact hole 122 that exposes aportion of the drain electrode 112. The conductive spacer 114 is formedon the passivation layer 124 and is connected to the drain electrode 112through the drain contact hole 122. Here, the TFT T corresponds to adrive TFT connected to the organic electro-luminescent diode E. Theconductive spacer 114 beneficially includes a conductive material suchas metal having ductility and low specific resistance. The conductivespacer 114 may be formed either on the first substrate 110 or on thesecond electrode 138 of the second substrate 130.

Because the organic electro-luminescent display device is a top emissiontype, the organic electro-luminescent layer 136 emits light toward thesecond substrate 130. Beneficially, the first electrode 132 is selectedfrom transparent conductive materials, while the second electrode 138 isselected from opaque metal materials.

Although not shown in the drawings, the array element 120 furtherincludes a scan line, a signal line and a power line crossing with thescan line and spaced apart from each other by a predetermined distance.The array element 120 further includes a switching TFT disposed at anoverlapped portion of the scan line and the signal line, and a storagecapacitor.

The organic electro-luminescence display device is a dual panel typewhere the second substrate 130 on which the electro-luminescent diode Eis formed is attached to the first substrate 110 on which the arrayelement 120 is formed. In other words, the array element 120 and theorganic electro-luminescent diode E are constructed on differentsubstrates. Therefore, unlike the case where the array element and theorganic electro-luminescence device are formed on the same substrate,the yield of the organic electro-luminescent diode is not influenced bythe yield of the array element and a high degree of freedom with respectto the arrangement of the TFTs can be obtained. Also, because the firstelectrode 132 of the organic electro-luminescent diode E is formed onthe transparent substrate 101, a degree of freedom with respect to thefirst electrode can be increased compared with the related art structurein which the first electrode is formed on the array element.

In the top emission type organic electro-luminescence display devicedescribed above, the TFTs can be designed without considering apertureratio, thereby increasing efficiency when forming the array element.Also, products having a high aperture ratio and high resolution can beproduced. In addition, because the organic electro-luminescent displaydevice is a dual panel type, an outer air can be blocked moreeffectively compared with the related art top emission type organicelectro-luminescent display device, thereby enhancing stability of theproduct.

An inkjet process is used to form the organic electro-luminescent layer136 formed of a high molecular compound. In such a case, it isbeneficial to prevent the ink from overflowing the buffer and to adjustthe profile and thickness of the film by confining the high molecularcompound within the emission region of the buffer. To this end, ahydrophobicity process is generally performed using plasma.

As described above, because the second buffer 535 surrounds the firstbuffer 533 and the first buffer 533 is etched in a undercut structure,it is possible to prevent the ink of a high molecular compound fromflowing into the stepped portion of the first buffer 533 during theinkjet process. Therefore, the organic electro-luminescent layer 136 canbe uniformly formed in each sub-pixel.

The structure of the first and second buffers 533 and 535 will bedescribed in detail with reference to FIG. 4.

FIG. 4 is an enlarged view of a region A illustrated in FIG. 3.

Referring to FIG. 4, the first electrode 132 of the organicelectro-luminescent diode E is formed on the transparent substrate 101of the second substrate 130, which is the top substrate of the organicelectro-luminescence display device. The first buffer 533 is formed atan outer region partitioning the sub-pixels on the first electrode 132.The second buffer 535 is formed at a region including the steppedportion of the first buffer 533. That is, the second buffer 535 isformed in a well structure surrounding the organic electro-luminescentlayer 136.

In addition, a portion of the first buffer 533 that is not overlappedwith the second buffer 535 is removed in a undercut structure during aplasma etching process. As a result, the adjacent sub-pixels areseparated from one another. That is, due to the space 534 formed by theundercut structure, the second electrodes 138 formed on the organicelectro-luminescent layers 136 in the sub-pixels are separated from oneanther. Therefore, the space 534 can serve as a separator withoutproviding a reverse-taper-shape separator that is used for aconventional organic electro-luminescent display device. Because theconventional separator is not formed, the fabricating process can besimplified and the width of the sub-pixels can be increased, therebyimproving the aperture ratio.

Also, the auxiliary electrode 139 is formed on the first electrode 132in the space 534 formed by the undercut structure. The auxiliaryelectrode 139 is formed during the process of forming the secondelectrode 138. The auxiliary electrode 139 reduces the resistance of thefirst electrode 132. Specifically, at least one surface of the firstbuffer 533 is formed inwardly from the second buffer 535 with a gapgreater than 0.1 μm.

The second buffer 535 having a well structure is formed in a regionincluding the stepped portion of the first buffer 533. Thus, thehydrophobicity process on the side surfaces prevents the ink of a highmolecular compound from being attracted toward the stepped portion ofthe first buffer 533 and flowing therein. In this way, the second buffer535 can obtain a shielding effect.

As a result, the present invention can solve the above-describedproblems caused by the overflow of the ink between the sub-pixels, ablackening phenomenon caused by the connection between the secondelectrodes 138, and a difficulty in adjusting the thickness of theorganic electro-luminescent layer by forming the second buffer 535 at aregion including the stepped portion of the first buffer 533.Accordingly, the picture quality of the organic electro-luminescencedisplay device can be improved.

The organic electro-luminescent layers 136 are formed at the regionspartitioned by the second buffers 535 in the sub-pixels, and the secondelectrodes 138 are formed on the organic electro-luminescent layer 136.

FIG. 5 is photographs showing the depths of the undercut of the bufferaccording to composition ratios of silane and ammonia.

Referring to FIG. 5, silicon nitride used as a material of the firstbuffer 533 is formed by a chemical reaction between silane (SiH₄) andammonia (NH₃). The depth d of the undercut formed in the first buffer533 is different depending on the composition ratio of silane andammonia. That is, when silicon nitride is etched by plasma, the etcheddepth of the undercut varies depending on the composition ratio ofsilane and ammonia.

Specifically, as shown in FIG. 5( a), when the composition ratio ofsilane to ammonia is 1:3, the depth of the undercut of the first buffer533 is about 0.265 μm. As shown in FIG. 5( b), when the compositionratio of silane to ammonia is 1:4, the depth of the undercut of thefirst buffer 533 is about 0.929 μm. Also, as shown in FIG. 5( c), whenthe composition ratio of silane to ammonia is 1:6, the depth of theundercut of the first buffer 533 is about 1.641 μm. That is, when thefirst buffer 533 is etched using plasma in which the amount of theammonia component is at least two times the amount of the silanecomponent, the first buffer 533 has a undercut.

Hereinafter, a method for fabricating an organic electro-luminescencedisplay device according to an embodiment of the present invention willbe described in detail.

FIGS. 6A to 6F are sectional views illustrating a method for fabricatingan organic electro-luminescence display device according to the firstembodiment of the present invention, and FIG. 7 is a flowchartillustrating a method for fabricating the organic electro-luminescencedisplay device according to the first embodiment of the presentinvention.

Referring to FIG. 6A, in operation 51, a transparent substrate 101having a plurality of sub-pixels arranged in a matrix configuration isprepared, and a transparent conductive metal such as indium tin oxide(ITO) is deposited on an entire surface of the transparent substrate101, thereby forming a first electrode 132.

Referring to FIG. 6B, in operation S2, silicon oxide (SiO₂) or siliconnitride (SiN_(x)) is deposited on the transparent substrate 101 on whichthe first electrode 132 is formed. Then, a first buffer 533 is formed bypatterning the deposited layer using a photo process and an etchingprocess. The first buffer 533 is formed at a region partitioning thesub-pixel.

Referring to FIG. 6C, in operation S3, a material (e.g., polyimide-basedmaterial) different from the first buffer 533 is deposited on an entiresurface of the transparent substrate 101 including the first buffer 533,and is patterned using a photo process and an etching process. As aresult, a second buffer 535 is formed at a region including a steppedportion of the first buffer 533. That is, the second buffer 535 isformed in a well structure to surround the sub-pixel region in which anorganic electro-luminescent layer will be formed. Accordingly, a uppercentral portion of the first buffer 533 is not covered by the secondbuffer 535 and is exposed to the outside.

In addition, the second buffer 535 is formed in a well structure (or around taper shape) at a region including the stepped portion of thefirst buffer 533. Therefore, the hydrophobicity process on the sidesurfaces prevents the ink of a high molecular compound from beingattracted toward the stepped portion of the first buffer 535 and flowingtherein.

Referring to FIG. 6D, in operation S4, the exposed central portion ofthe first buffer 533 is etched using the second buffer 535 as a mask.The etching process is performed in such a way to form a undercutstructure in the first buffer 533 and a space 534 in the central portionof the first buffer 533, thereby exposing the first electrode 132.

A dry etching using plasma is beneficially used for the etching process.When the first buffer is formed of a silicon nitride based material, thedry etching uses a mixture of oxygen and a fluorine based gas such asCF₄ and SF₆. In such a case, the dry etching process performs both theetching of the first buffer 533 to form a undercut structure and thehydrophobicity process on the surfaces of the second buffer 535. Asdescribe above with reference to FIG. 5, the composition of siliconnitride of the first buffer 533 should be determined to form adesired-size of a undercut in the buffer. Beneficially, at least onesurface of the first buffer 533 is formed inwardly from the secondbuffer 535 with a gap greater than 0.1 μm. In addition, a hydrophilicprocess may be performed using oxygen plasma before the dry etchingprocess.

Because plasma is used to etch the first buffer 533 and is also appliedto surfaces of the first electrode 132 and the second buffer 535, thesurface of the first electrode 132 becomes hydrophilic and the surfaceof the second buffer 535 becomes hydrophobic.

As described in FIG. 5, when the first buffer 533 is formed of siliconnitride, the depth of the undercut can be controlled according to thecomposition ratio of silane to ammonia. By forming the first buffer 533of silicon nitride having a predetermined composition ratio, the etchingprocess and hydrophobicity process can be simultaneously performedduring the plasma dry etching process.

Alternative methods for forming a undercut structure and performing asurface treatment will be described. In these examples, the first buffer533 is formed of either silicon nitride (SiN_(x)) or silicon oxide(SiO₂), and the second buffer 535 is beneficially formed of an organicmaterial or an inorganic material different from the first buffer 533.

First, when the first buffer 533 is formed of silicon nitride (SiN_(x)),a plasma dry etching process forms a undercut structure at the exposedfirst buffer 533 and performs the hydrophobicity process on the secondbuffer 535 at the same time. That is, the exposed surface of the firstbuffer 533 formed of silicon nitride (SiN_(x)) is removed to form aundercut structure by an etching process using a mixture of oxygen and afluorine based gas after an oxygen surface treatment.

Second, when the first buffer is formed of silicon oxide (SiO₂), aseparate wet etching process is performed to form a undercut structureat the exposed first buffer 533. That is, the undercut structure can beformed by wet-etching the exposed surface of the first buffer 533 thatis not overlapped with the second buffer 535. In this case, anadditional hydrophobicity process is generally required after thewet-etching process.

Referring to FIG. 6E, in operation S5, an organic electro-luminescentlayer 136 is formed on the first electrode 132 in each sub-pixel byusing an inkjet deposition apparatus (not shown). The organicelectro-luminescent layer 136 produces any one of R, G and B colors, andis formed of a high molecular material or low molecular material.

When the organic electro-luminescent layer 136 is formed of a highmolecular material and the first and second electrodes 132 and 138 arethe anode and the cathode, respectively, the organic electro-luminescentlayer 136 includes a hole transporting layer, an emission layer and anelectron transporting layer, which are stacked in sequence. Thehole/electron transporting layers are used to inject holes or electronsinto the emission layer and transport them. The hole transporting layercontacting the first electrode 132 has a stacked structure of the holeinjection layer and the hole transporting layer, and the electrontransporting layer contacting the second electrode 138 has a stackedstructure of the electron injection layer and the electron transportinglayer.

As described above, during the process of forming the undercutstructure, the surface of the first electrode 132 becomes hydrophilicand the surface of the second buffer 535 becomes hydrophobic. Therefore,the organic electro-luminescent layer 136 formed by the inkjet methodhas a good cohesive force with the surface of the first electrode 132and a bad cohesive force with the surface of the second buffer 535. Dueto this surface characteristic, the organic electro-luminescent layer136 can be uniformly formed on the first electrode 132 in eachsub-pixel.

Referring to FIG. 6F, in operation S6, a metal layer is deposited on anentire surface of the transparent substrate 101 on which the organicelectro-luminescent layer 136 is formed to form a second electrode 138serving as a cathode. The metal layer can be formed of gallium,magnesium, aluminum, or the like.

Due to the undercut structure, the second electrodes 138 formed on theorganic electro-luminescent layers of the sub-pixels are not connectedto one another. That is, the second electrodes 138 in the sub-pixels areseparated from one another by the space 534 disposed between the secondbuffers 535. Therefore, each sub-pixel has an independent secondelectrode 138 and the space 534 serves as a separator without providinga conventional reverse-taper-shape separator.

In forming the second electrode 138, an auxiliary electrode 139, whichis formed of the same material as the second electrode 138, is formed onthe first electrode 132 in the space 534 of the undercut region. Theauxiliary electrode 139 is electrically connected to the first electrode132 and thus reduces the resistance of the first electrode 132.

FIG. 8 is a plan view of an organic electro-luminescence display deviceaccording to a second embodiment of the present invention, and FIGS. 9Ato 9G are sectional views illustrating a method for fabricating theorganic electro-luminescence display device according to the secondembodiment of the present invention. Since the structure of the organicelectro-luminescence display device in FIG. 8 is similar to that ofFIGS. 3 and 6A to 6F, a description thereof will be made centering ondifferent parts.

Referring to FIG. 8, the organic electro-luminescence display deviceincludes R, G and B sub-pixels arranged in a matrix configuration thatconstitute one pixel. The sub pixels are separated from one another by abuffer layer. Also, the buffer layer includes a first buffer 533 and asecond buffer 535. Auxiliary electrodes 139 are arranged around thesub-pixels in a grid shape. The auxiliary electrodes 139 electricallycontact a first electrode 132 to commonly apply a voltage to thesub-pixels. Each of the auxiliary electrodes 139 includes a firstauxiliary electrode 139 a and a second auxiliary electrode 139 b.

The first buffer 533 formed inside the second buffer 535 has a undercutstructure, as in the first embodiment. However, a stacked structure ofthe first and second auxiliary electrodes 139 a and 139 b is formed onthe first electrode 132 exposed to the outside by the undercutstructure.

As described above, a vapor deposition method is generally used to forman organic electro-luminescent layer 136 of a low molecular compound. Insuch a case, an insulating layer may be formed between the firstelectrode 132 and the auxiliary electrode, which prevents reducing theresistance of the first electrode 132. For this reason, the auxiliaryelectrode 139 of the second embodiment has a stacked electrode structureof the first and second auxiliary electrodes 139 a and 139 b.

A method of fabricating the organic electro-luminescence display deviceaccording to the second embodiment of the present invention will bedescribed below with reference to FIGS. 9A to 9G.

Referring to FIGS. 9A to 9G, a first electrode 132 is formed on atransparent substrate 101 with a plurality of sub-pixels arranged in amatrix configuration, and a first auxiliary electrode 139 a is formed ata region partitioning the sub-pixels. The first auxiliary electrode 139a is formed of metal having a high conductivity to reduce the resistanceof the first electrode 132 formed of a transparent conductive metal.

After forming the first auxiliary electrode 139 a, a first buffer 533 ofsilicon oxide (SiO₂) or silicon nitride (SiN_(x)) is formed on the firstauxiliary electrode 139 a using.

Then, a material (e.g., a polyimide-based material) different from thefirst buffer 533 is deposited on an entire surface of the transparentsubstrate 101 and patterned to form a second buffer 535 at a regionincluding a stepped portion of the first buffer 533. Since thesubsequent processes are similar to those of FIGS. 6B to 6F, a detaileddescription thereof will be omitted for conciseness.

Accordingly, the first electrode 132 and the first auxiliary electrode139 a formed under the first buffer 533 are exposed to the outside dueto a undercut structure.

Then, an organic electro-luminescent layer 136 is formed on the firstelectrode 132 exposed in the sub pixel region, and a metal layer isdeposited on an entire region of the transparent substrate 101 tothereby form a second electrode 138 on the organic electro-luminescentlayer 136. At this time, the materials of the first and second buffers533 and 535, the process for forming the undercut structure and thehydrophobicity process are identical to those described with referenceto FIGS. 6A to 6F.

When the second electrode 138 is formed, a portion of the secondelectrode 138 is formed within the undercut structure to form a secondauxiliary electrode 139 b. Accordingly, due to the undercut structure,the two auxiliary electrodes 139 a and 139 b are formed on the firstelectrode 132 in the first buffer 533.

As described above, an insulating layer may be formed on the firstauxiliary electrode 139 a. Therefore, even though the second auxiliaryelectrode 139 b does not electrically contact the first electrode 132,the first auxiliary electrode 139 a can reduce the resistance of thefirst electrode 132.

In the second embodiment, the first electrode 132 is formed on thetransparent substrate 101 and then the first auxiliary electrode 139 ais formed on the first electrode 132. However, it should be appreciatedthat the order can be reversed. That is, the first auxiliary electrode139 a can be formed on the transparent substrate 101 and then the firstelectrode 132 can be formed on the first auxiliary electrode 139 a.

FIG. 10 is a plan view of an organic electro-luminescence display deviceaccording to a third embodiment. In FIG. 10, only one pixel region (thatis, three sub-pixels) is illustrated for conciseness. It should beappreciated that the embodiment described with reference to FIG. 10 isan exemplary embodiment of the present invention and variousmodifications are possible in accordance with the principles of thepresent invention.

The structural differences between the organic electro-luminescencedisplay device of FIG. 10 and that of FIG. 2 will now be described.

Referring back to FIG. 2, the sub-pixels are partitioned and separatedfrom one another by the first buffers 533 and the second buffers 535.Specifically, the second buffer 535 is formed at a region including astepped portion of the first buffer 533. The second buffer 535 is formedin a well structure surrounding the organic electro-luminescent layer.Also, the auxiliary electrodes 139 are formed between the sub-pixels ina grid shape. The auxiliary electrodes 139 electrically contact thefirst electrode 132 to reduce the resistance of the first electrode 132.

Referring to FIG. 10, each of the sub-pixels includes a first buffer 533having a polygonal structure, a second buffer 535 formed at a regionincluding a stepped portion of the first buffer 533, and a conductivespace contacting part 810 disposed at a region protruded from one sideof the polygonal first buffer 533 and electrically connected to thearray element of the first substrate. The corners of the sub-pixels arerounded and the edges are disposed within a region partitioned by thesecond buffer 535. Due to a undercut structure, second electrodes formedin the sub-pixels are electrically separated from one another. Theundercut structure is formed corresponding to the exposed portion of thefirst buffer 533. Therefore, the sub-pixels can be independently driven.

In the third embodiment of FIG. 10, in order not to position theconductive space contacting part 810 within the sub-pixel region, thefirst and second substrates may be misaligned by a predetermineddistance and attached to each other.

The undercut structure can be formed by a dry etching. The depth of theundercut can be controlled by the composition of silicon nitride, whichin turn can be controlled by the composition ratio of silane and ammoniaduring the deposition of silicon nitride.

With the plasma dry etching process, the etching process for theundercut structure and the surface treatment can be performed at thesame time, thereby simplifying the fabricating process and improving theprocessing yield. Also, because the conventional separator having areverse taper shape is not required to separate the sub-pixels, thefabricating process can be further simplified and the width of thesub-pixels can be increased to thereby improve the aperture ratio.

In addition, because the conductive separating layer formed at the sametime as the second electrode contacts the first electrode in the spaceof the exposed first buffer region, the resistance of the firstelectrode can be reduced. Also, the organic electro-luminescent layer ofa high molecular compound can be uniformly formed because of the secondbuffer that has a round tapered shape and is formed at a regionincluding the stepped portion of the first buffer. Moreover, theattraction effect of the ink can be reduced by removing the steppedportion of the buffer in the inkjet process, thereby increasing thejetting directionality margin.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present invention. Thus,it is intended that the present invention covers the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. A method for fabricating an organic electro-luminance display device, comprising: forming an array element on a first substrate, the array element including at least one TFT in each sub-pixel; forming a first electrode on a second substrate; forming a buffer on the first electrode, the buffer including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; forming an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; forming a second electrode on the organic electro-luminescent layer; forming an auxiliary electrode on the first electrode; and attaching the first and second substrates together, wherein the auxiliary electrode and the second electrode are formed of the same material at the same time.
 2. The method according to claim 1, further comprising: forming a conductive spacer for electrically connecting the TFT with the second electrode.
 3. The method according to claim 1, wherein the second buffer has around taper shape.
 4. The method according to claim 1, wherein the second buffer has a well structure surrounding the organic electro-luminescent layer.
 5. The method according to claim 1, wherein the organic electroluminescent layer is formed of either a high molecular material or a low molecular material.
 6. The method according to claim 5, wherein the high molecular material is formed by a solution casting method.
 7. The method according to claim 1, wherein at least one surface of the first buffer is formed inwardly from the second buffer with a gap greater than 0.1 μm.
 8. The method according to claim 1, wherein the first and second buffers are formed of different materials.
 9. The method according to claim 8, wherein the first buffer includes either silicon nitride (SiNx) or silicon oxide (SiO2).
 10. The method according to claim 8, wherein when the first buffer includes silicon nitride (SiNx), the undercut structure is formed by a dry-etching process with a fluorine based gas.
 11. The method according to claim 9, wherein when the first buffer includes silicon oxide (SiO2), the undercut structure is formed by a wet etching process following a hydrophobicity process.
 12. The method according to claim 10, wherein a hydrophobicity process is simultaneously performed with the dry-etching process on a surface of the second buffer.
 13. The method according to claim 12, wherein a surface of the first electrode maintains a hydrophilic surface during the hydrophobicity process.
 14. A method for fabricating an organic electro-luminance display device, comprising: providing a substrate having a pixel region; forming a first electrode on the substrate; forming a first buffer on the first electrode except for the pixel region; forming a second buffer at a stepped portion of the first buffer to surround the pixel region; forming a undercut structure by etching a portion of the first buffer that is not overlapped with the second buffer; forming an organic electro-luminescent layer in the pixel region; forming a second electrode on the organic electro-luminescent layer; and forming an auxiliary electrode on the first electrode, wherein the auxiliary electrode and the second electrode are formed of the same material at the same time.
 15. The method according to claim 14, wherein the first buffer is formed of one of silicon nitride and silicon oxide.
 16. The method according to claim 15, wherein when the first buffer is formed of silicon nitride, an etching process is performed using plasma.
 17. The method according to claim 15, wherein when the first buffer is formed of silicon nitride, an amount of ammonia is at least twice as much as an amount of silane during a formation of the first buffer.
 18. The method according to claim 16, wherein a surface of the second buffer becomes hydrophobic and the pixel region becomes hydrophilic in the etching process.
 19. The method according to claim 14, wherein the second buffer is formed in a round taper shape.
 20. The method according to claim 14, wherein the second buffer is formed in a well type to surround a region in which the organic electro-luminescent layer is formed.
 21. The method according to claim 14, wherein the organic electroluminescent layer is formed of one of a high molecular material and a low molecular material.
 22. The method according to claim 21, wherein the high molecular material is formed by a solution casting method.
 23. The method according to claim 14, wherein at least one surface of the first buffer is formed inwardly from the second buffer with a gap greater than 0.1 μm.
 24. The method according to claim 14, wherein the first and second buffers are formed of different materials.
 25. The method according to claim 15, wherein when the first buffer is formed of silicon nitride (SiNx), the undercut structure is formed by a dry-etching process using CF4.
 26. The method according to claim 15, wherein when the first buffer is formed of silicon oxide (SiO2), the undercut structure is formed by a wet etching process.
 27. A method for fabricating an organic electro-luminescence display device, comprising: forming a first electrode on a substrate; forming a first auxiliary electrode on the substrate where the first electrode is formed; forming a first buffer on the first electrode except for a pixel region; forming a second buffer on the substrate where the first buffer is formed; forming a buffer layer with a undercut structure, in which the first electrode and the first auxiliary electrode are exposed, by etching the first buffer through a hydrophobicity process of the second buffer; after forming the buffer layer with the first buffer and the second buffer, forming an organic electro-luminescent layer in the pixel region; and forming a second electrode and a second auxiliary electrode on the first auxiliary electrode by forming a conductive metal layer on the substrate where the organic electro-luminescent layer is formed.
 28. The method according to claim 27, wherein the first buffer is formed of one of silicon nitride and silicon oxide.
 29. The method according to claim 28, wherein when the first buffer is formed of silicon nitride, an etching process is performed using plasma.
 30. The method according to claim 28, wherein when the first buffer is formed of silicon nitride, an amount of ammonia is at least twice as much as an amount of silane during a formation of the first buffer.
 31. The method according to claim 29, wherein a buffer region becomes hydrophobic and a sub pixel region becomes hydrophilic in the surface process using plasma.
 32. The method according to claim 27, wherein the second buffer is formed in a round taper shape.
 33. The method according to claim 27, wherein the second buffer is formed in a well type to surround a region in which the organic electro-luminescent layer is formed.
 34. The method according to claim 27, wherein the organic electro luminescent layer is formed of one of a high molecular material and a low molecular material.
 35. The method according to claim 34, wherein the organic electroluminescent layer is formed using one of an inkjet process, a vacuum deposition process, a roll coating process, a transcription process, and a nozzle spraying process.
 36. The method according to claim 27, wherein at least one surface of the first buffer in the undercut structure region is formed in a gap shape of 0.1-3 μm inwardly from the second buffer.
 37. The method according to claim 27, wherein the first and second buffers are formed of different materials.
 38. The method according to claim 28, wherein when the first buffer is formed of the silicon nitride (SiNx), the undercut structure is automatically formed by performing CF4 hydrophobicity process with respect to the second buffer.
 39. The method according to claim 28, wherein when the first buffer is formed of the silicon oxide (SiO2), the undercut structure is formed by performing a separate wet etching process with respect to a first buffer region. 